NTMFS4927NT1G datasheet

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О ДАТАШИТЕ

• Маркировка
  NTMFS4927NT1G
• Производитель
  ON Semiconductor
• Описание
  ON Semiconductor NTMFS4927NT1G Configuration: Single Continuous Drain Current: 38 A Current - Continuous Drain (id) @ 25?° C: 7.9A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 40 s Gate Charge (qg) @ Vgs: 8nC @ 4.5V Gate Charge Qg: 8 nC Input Capacitance (ciss) @ Vds: 913pF @ 15V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-TDFN Power - Max: 920mW Power Dissipation: 0.92 W, 2.7 W, 6.04 W, 20.8 W Rds On (max) @ Id, Vgs: 9 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 13.5 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.2V @ 250?µA
• Количество страниц
  1 шт.
• Форматы файла
  HTML, PDF

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